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NXP BUK9Y25-80E  ,   using  the  logic  level  N  channel  MOSFET  technology  in  the

TrenchMOS LFPAK56 (Power SO8) package .

This product has been designed and meets AEC Q101 standards and can be used in high-

performance automotive applications .

Features of the NXP BUK9Y25-80E  ;

-Consistent with Q101

-Repeat the avalanche level

-At 175C,   you have a true logic level gate with a VGS (th) rating greater than 0.5V

The Application of the NXP BUK9Y25-80E ;

-The 12 V,  24 V,  and 48 V automotive systems

-Motor,  indicator light,  and solenoid valve controls

-Transmission control

-Ultra-high-performance power switch

Parameters of the NXPBUK9Y25-80E ;

-Product category  : MOSFET

-Installation style  : SMD / SMT

-Rds On-leakage source conduction resistance : 22.2 mOhms

-Vgs-gate-Source voltage : -15 V, + 15 V

-Vgs th-gate source pole threshold voltage : 1.7 V

-Package / box : LFPAK56-5

-Transistor polarity : N-Channel

-Number of channels : 1 Channel

-Vds-drain source breakdown

-Id-continuous drain current : 37 A

-Minimum operating temperature : -55 C

-Maximum operating temperature : + 175 C

-Pd-Power dissipation : 95 W

-Time : 15.3 ns

-Rise time : 17.2 ns

-Typical shutdown delay time : 23.9 ns

-Typical turn-on delay time : 11.6 ns